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| CHA1077A RoHS COMPLIANT W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077A is a W-band monolithic 3stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on P-HEMT process: 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT +V -V W-band amplifier block-diagram Main Features W-band low noise amplifier High gain Wide operating frequency range High temperature range On-chip self biasing Additional external resistor allows to choose getting more gain instead of a minimum noise factor Automatic assembly oriented Low DC power consumption BCB layer protection Chip size: 2.6 x 1.32 x 0.1mm Small signal gain Main Characteristics Tamb = +25C Symbol F_op G_lin NF P_1dB Parameter Operating frequency Small signal gain Noise figure Output power at 1dB gain compression Min 76 15 4.5 9 Typ Max 77 Unit GHz dB dB dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. DSCHA1077A6013 - 13 Jan 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA1077A Electrical Characteristics W-band LNA Full operating temperature range, used according to section "Typical assembly and bias configuration". Symbol F_op G_lin G_fl NF P_out_1dB Is VSWR_in VSWR_out +V +I -V -I Top Parameter Operating frequency Small signal gain Small signal gain flatness Noise figure Output power at 1dB gain compression Reverse isolation VSWR at input port (50) VSWR at output port (50) Positive supply voltage (1) Positive supply current Negative supply voltage (1) Negative supply current Operating temperature range Min 76 11 Typ 15 0.5 4.5 9 30 2:1 2:1 4.5 40 -4.5 -6 Max 77 19 1 6.5 Unit GHz dB dB dB dBm dB 6 20 4.4 -4.6 -10 -40 2.5:1 2.5:1 4.6 70 -4.4 0 100 V mA V mA C (1) Negative supply voltage must be applied at least 1us before positive supply voltage. Absolute Maximum Ratings (1) Symbol P_in +V -V +I -I Tstg (1) (2) Parameter Maximum input power (2) Positive supply voltage Negative supply voltage Positive supply current Negative supply current Storage temperature range Values 3 5 -5 80 -13 -55 to +155 Unit dBm V V mA mA C Operation of this device above anyone of these parameters may cause permanent damage. CW mode Ref. DSCHA1077A6013 - 13 Jan 06 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band LNA Chip Mechanical Data and Pin References CHA1077A 55 2475 10991 6 5 405 9 8 405 7 0 1 2 3 4 70 645 Origin 0,0 Layout 2530X1250 945 1245 1845 Unit = m External chip size (layout size + dicing streets) = 2600X1320 +/-35 Chip thickness = 100 +/- 10 HF Pads (5,8) = 105 X 86 (BCB opening) DC/IF Pads = 86 x 83 (BCB opening) Pin number 4, 6, 7, 9 3 5 8 0 1 2 OUT IN +V -V1 -V23 Pin name Description Ground: should not be bonded. If required, please ask for more information. Ground (optional) RF output port RF input port Positive supply voltage Negative supply voltage for the first stage Negative supply voltage for the second and third stage Ref. DSCHA1077A6013 - 13 Jan 06 3/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA1077A W-band LNA Typical Assembly and Bias Configuration to get minimum noise figure : 10991 L_in 9 8 6 5 0 2 3 4 L_out - strip line 7 - strip line >= 120pF +V -V DC lines This drawing shows an example of assembly and bias configuration. All the transistors are internally self-biased. An external capacitor is recommended for the positive and negative supply voltages. For the RF pads the equivalent wire bonding inductance (diameter=25m) have to be according to the following recommendation. Port IN OUT Equivalent inductance (nH) L_in = 0.25 L_out = 0.25 Wire length (mm) (1) 0.34 0.34 (1) This value is the total length including the necessary loop from pad to pad. For a micro-strip configuration a hole in the substrate is necessary for chip assembly. Ref. DSCHA1077A6013 - 13 Jan 06 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band LNA CHA1077A Typical Assembly and Bias Configuration to increase the gain : 10991 L_in 9 8 6 5 0 1 2 4 L_out - strip line 7 - strip line >= 120pF +V DC lines R -V Let's tune the value of the external resistor R to control the biasing point of the first stage and then getting a higher gain for the LNA (trade-off ability between the gain and the noise factor). Typical value of the external resistor R : R (k) 0 2 Description Low-noise configuration Maximum gain configuration Ref. DSCHA1077A6013 - 13 Jan 06 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA1077A W-band LNA As the connections at 77GHz (between MMIC and MMIC or between MMIC and external substrate) are critical, the transition matching network is split into two parts: one on MMIC and one on the external substrate. This choice allows doing also a direct connection between MMICs. For a connection to an external substrate a network is proposed on soft substrate for IN and OUT ports. The following drawings give the dimensions for a RO3003 substrate (thickness=0.127mm, r=3). 500 um 865 um Bonding area Wire length : 340 m 300 um 235 um 225 um Proposed matching network for a 50 transition between IN port and a -strip line on RO3003 substrate 500 um 370 um Bonding area 225 um0 um 10 Wire length : 340 m 300 um 235 um Proposed matching network for a 50 transition between OUT port and a -strip line on RO3003 substrate Ref. DSCHA1077A6013 - 13 Jan 06 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band LNA CHA1077A Ref. DSCHA1077A6013 - 13 Jan 06 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA1077A W-band LNA Ordering Information Chip form : CHA1077A98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA1077A6013 - 13 Jan 06 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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